BCV65,215 NXP Semiconductors, BCV65,215 Datasheet - Page 10

• Manufacturer Part Number: BCV65,215
• Description: TRANS NPN/PNP 30V 100MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV65,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 2mA, 5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 75 at 2 mA at 5 V
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Base Common Emitter
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933831500215; BCV65 T/R; BCV65 T/R

NXP Semiconductors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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BCV65
Product data sheet
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Rev. 4 — 27 July 2010
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NPN/PNP general-purpose transistor
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