BCV65,215 NXP Semiconductors, BCV65,215 Datasheet - Page 3

• Manufacturer Part Number: BCV65,215
• Description: TRANS NPN/PNP 30V 100MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV65,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 2mA, 5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 75 at 2 mA at 5 V
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Base Common Emitter
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933831500215; BCV65 T/R; BCV65 T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BCV65
Product data sheet
Table 6.
[1]
Table 7.
T
[1]
[2]
Symbol
R
Symbol
Per transistor; for the PNP transistor with negative polarity
I
V
V
V
h
CBO
j
FE
CEsat
BEsat
BE
th(j-a)
= 25
Device mounted on an FR4 Printed-Circuit Board (PCB).
V
V
BEsat
BE
°
C unless otherwise specified.
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
Parameter
thermal resistance from junction
to ambient
Thermal characteristics
Characteristics
Parameter
collector-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
base-emitter voltage
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 27 July 2010
V
I
Conditions
V
V
T
I
I
I
I
I
I
I
I
I
V
C
B
C
B
C
B
C
B
C
C
j
CB
CB
CE
CE
= 150 °C
= 10 mA;
= 0.5 mA
= 100 mA;
= 5 mA
= 10 mA;
= 0.5 mA
= 100 mA;
= 5 mA
= 2 mA; V
= 10 mA;
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V
Conditions
in free air
C
CE
E
E
= 2 mA
= 0 A
= 0 A;
= 5 V
NPN/PNP general-purpose transistor
[1]
[1]
[2]
[2]
Min
-
-
75
-
-
-
-
580
-
[1]
Min
-
Typ
-
-
-
90
250
700
900
650
-
Typ
-
© NXP B.V. 2010. All rights reserved.
Max
15
5
800
300
650
-
-
750
820
BCV65
Max
500
mV
Unit
nA
μA
mV
mV
mV
mV
mV
Unit
K/W
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