BCV65,215 NXP Semiconductors, BCV65,215 Datasheet - Page 2

• Manufacturer Part Number: BCV65,215
• Description: TRANS NPN/PNP 30V 100MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV65,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 2mA, 5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 75 at 2 mA at 5 V
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Base Common Emitter
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933831500215; BCV65 T/R; BCV65 T/R

NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
BCV65
Product data sheet
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Type number
BCV65
Type number
BCV65
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
I
I
I
Per device
P
T
T
T
C
CM
BM
j
amb
stg
CBO
CEO
tot
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Parameter
collector-base voltage
collector-emitter voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Ordering information
Marking codes
Limiting values
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 4 — 27 July 2010
Description
plastic surface-mounted package; 4 leads
open emitter
open base
T
Conditions
amb
Marking code
97*
≤ 25 °C
NPN/PNP general-purpose transistor
[1]
Min
-
-
-
-
-
-
-
−65
−65
© NXP B.V. 2010. All rights reserved.
Max
30
30
100
200
200
250
150
+150
+150
BCV65
Version
SOT143B
Unit
V
V
mA
mA
mA
mW
°C
°C
°C
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