BCM847DS,115 NXP Semiconductors, BCM847DS,115 Datasheet - Page 4

• Manufacturer Part Number: BCM847DS,115
• Description: TRANS NPN/NPN 45V 100MA SC74
• Manufacturer: NXP Semiconductors

Specifications of BCM847DS,115

• Package / Case: SC-74-6
• Mounting Type: Surface Mount
• Power - Max: 380mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: 2 NPN (Dual)
• Frequency - Transition: 250MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 380 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059058115::BCM847DS T/R::BCM847DS T/R

NXP Semiconductors
7. Characteristics
BCM847BV_BS_DS_6
Product data sheet
Table 7.
[1]
[2]
Table 8.
T
Symbol
Per device
R
Symbol
Per transistor
I
I
h
V
V
V
C
C
CBO
EBO
amb
FE
CEsat
BEsat
BE
th(j-a)
c
e
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
= 25 C unless otherwise specified
Parameter
thermal resistance from
junction to ambient
Thermal characteristics
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
SOT666
SOT363
SOT457
Rev. 06 — 28 August 2009
Conditions
V
I
V
I
T
V
I
V
I
V
I
I
I
I
I
I
I
I
I
V
I
V
I
V
I
f = 1 MHz
V
I
f = 1 MHz
…continued
E
E
C
C
C
C
B
C
B
C
B
C
B
C
C
E
C
j
CB
CB
EB
CE
CE
CE
CE
CB
EB
Conditions
in free air
= 0 A
= 0 A;
= 150 C
= 0 A
= 10 A
= 2 mA
= 10 mA;
= 0.5 mA
= 100 mA;
= 5 mA
= 10 mA;
= 0.5 mA
= 100 mA;
= 5 mA
= 2 mA
= 10 mA
= i
= i
= 30 V;
= 30 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 10 V;
= 0.5 V;
e
c
= 0 A;
= 0 A;
NPN/NPN matched double transistors
[1][2]
BCM847BV/BS/DS
[1]
[1]
[1]
[1]
[2]
[2]
Min
-
-
-
Min
-
-
-
-
200
-
-
-
-
610
-
-
-
Typ
-
-
-
Typ
-
-
-
250
290
50
200
760
910
660
-
-
11
© NXP B.V. 2009. All rights reserved.
Max
15
5
100
-
450
200
400
-
-
710
770
1.5
-
Max
416
416
328
Unit
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
A
Unit
K/W
K/W
K/W
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