EMH11T2R Rohm Semiconductor, EMH11T2R Datasheet

TRANS DUAL NPN 50V 50MA EMT6

EMH11T2R

Manufacturer Part Number
EMH11T2R
Description
TRANS DUAL NPN 50V 50MA EMT6
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of EMH11T2R

Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT6
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Transistor Case
RoHS Compliant
Dc Current Gain Hfe
30
Transistor Case Style
EMT
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EMH11T2R
EMH11T2RTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EMH11T2R
Manufacturer:
ROHM
Quantity:
2 881
Part Number:
EMH11T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
EMH11T2R
Quantity:
9 000
Company:
Part Number:
EMH11T2R
Quantity:
8 000
Transistors
General purpose (dual digital transistors)
EMH11 / UMH11N / IMH11A
1) Two DTC114E chips in a EMT or UMT or SMT
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both DTr
EMH11
UMH11N
IMH11A
EMH11 / UMH11N
Type
Features
Structure
Equivalent circuit
Packaging specifications
package.
automatic mounting machines.
interference.
DTr
2
(3)
R
R
(4)
R
R
1
2
=10kΩ
=10kΩ
2
1
(2)
(5)
R
R
1
2
Package
Code
Basic ordering
unit (pieces)
DTr
(1)
(6)
1
DTr
IMH11A
2
(4)
R
R
(3)
R
R
1
2
=10kΩ
=10kΩ
2
1
(5)
(2)
R
R
1
2
DTr
(6)
(1)
8000
T2R
1
Taping
3000
TN
1
and DTr
T110
3000
2
.
External dimensions (Unit : mm)
EMH11
UMH11N
ROHM : EMT6
ROHM : UMT6
EIAJ : SC-88
IMH11A
ROHM : SMT6
EIAJ : SC-74
EMH11 / UMH11N / IMH11A
Abbreviated symbol : H11
Abbreviated symbol : H11
0.3to0.6
Abbreviated symbol : H11
0.1Min.
( 4 )
( 5 )
( 6 )
1.2
1.6
1.25
2.1
1.6
2.8
Each lead has same dimensions
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
Each lead has same dimensions
Rev.A
1/3

Related parts for EMH11T2R

EMH11T2R Summary of contents

Page 1

Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A Features 1) Two DTC114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are ...

Page 2

Transistors Absolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Collector current EMH11,UMH11N Power dissipation IMH11A Junction temperature Storage temperature ∗ 1 120mW per element must not be exceeded. ∗ 2 200mW per element must not be exceeded. ...

Page 3

Transistors = 500m Ta=100°C 200m 25°C −40°C 100m 50m 20m 10m 100µ 200µ 500µ 10m 20m 50m 100m OUTPUT CURRENT : I (A) O Fig.4 Output voltage vs. output ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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