EMH11T2R Rohm Semiconductor, EMH11T2R Datasheet - Page 3

• Manufacturer Part Number: EMH11T2R
• Description: TRANS DUAL NPN 50V 50MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMH11T2R

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 100mA
• Transistor Case: RoHS Compliant
• Dc Current Gain Hfe: 30
• Transistor Case Style: EMT
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMH11T2R; EMH11T2RTR

Transistors
500m
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
1
Fig.4 Output voltage vs. output
OUTPUT CURRENT : I
current
500µ 1m
2m
Ta=100°C
5m 10m 20m 50m 100m
−40°C
25°C
O
(A)
l
O
/l
I
=20
EMH11 / UMH11N / IMH11A
Rev.A
3/3