EMH11T2R Rohm Semiconductor, EMH11T2R Datasheet - Page 3
![TRANS DUAL NPN 50V 50MA EMT6](/photos/5/43/54320/emt6_emt6_pkg_sml.jpg)
EMH11T2R
Manufacturer Part Number
EMH11T2R
Description
TRANS DUAL NPN 50V 50MA EMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.EMH11T2R.pdf
(4 pages)
Specifications of EMH11T2R
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT6
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Transistor Case
RoHS Compliant
Dc Current Gain Hfe
30
Transistor Case Style
EMT
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EMH11T2R
EMH11T2RTR
EMH11T2RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EMH11T2R
Manufacturer:
ROHM
Quantity:
2 881
Part Number:
EMH11T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
500m
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
1
Fig.4 Output voltage vs. output
OUTPUT CURRENT : I
current
500µ 1m
2m
Ta=100°C
5m 10m 20m 50m 100m
−40°C
25°C
O
(A)
l
O
/l
I
=20
EMH11 / UMH11N / IMH11A
Rev.A
3/3