EMH11T2R Rohm Semiconductor, EMH11T2R Datasheet - Page 2

• Manufacturer Part Number: EMH11T2R
• Description: TRANS DUAL NPN 50V 50MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMH11T2R

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 100mA
• Transistor Case: RoHS Compliant
• Dc Current Gain Hfe: 30
• Transistor Case Style: EMT
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMH11T2R; EMH11T2RTR

Transistors
∗
∗
∗
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Supply voltage
Input voltage
Output current
Collector current
Power
dissipation
Storage temperature
Transition frequency of the device
Absolute maximum ratings (Ta=25°C)
Junction temperature
Electrical characteristics (Ta=25°C)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Electrical characteristic curves
500m
200m
100m
Fig.1 Input voltage vs. output current
100
50
20
10
100µ 200µ
5
2
1
Parameter
(ON characteristics)
Parameter
OUTPUT CURRENT : I
500µ 1m
Ta=−40°C
EMH11,UMH11N
IMH11A
100°C
25°C
2m
5m 10m 20m 50m 100m
Symbol
R
V
O
V
V
I
O (off)
R
O (on)
G
2
(A)
f
I (off)
I (on)
I
T
/R
I
V
1
I
O
1
=0.3V
Min.
0.8
Symbol
30
I
−
−
3
−
−
−
7
C (Max.)
Tstg
V
V
Pd
I
Tj
CC
O
IN
Fig.2 Output current vs. input voltage
Typ.
250
0.1
500µ
200µ
100µ
10
10m
−
−
−
−
−
1
50µ
20µ
10µ
5m
2m
1m
1µ
5µ
2µ
0
(OFF characteristics)
Ta=100°C
150 (TOTAL)
300 (TOTAL)
−55 to +150
Max.
0.88
0.5
0.3
0.5
1.2
−40°C
0.5
13
−
−
−
Limits
25°C
INPUT VOLTAGE : V
−10
100
150
50
40
50
1
MHz
Unit
mA
µA
kΩ
V
V
−
−
1.5
V
V
V
I
V
V
V
O
CE
CC
O
I
CC
O
/I
=5V
2
I (off)
Unit
mW
=0.3V, I
=5V, I
mA
mA
I
°C
°C
=10V, I
=10mA/0.5mA
=5V, I
=50V, V
V
V
(V)
V
2.5
EMH11 / UMH11N / IMH11A
CC
O
∗
∗
O
=5V
=5mA
O
E
1
2
=100µA
=−5mA, f=100MHz
=10mA
I
=0V
Conditions
3
−
−
500
200
100
50
20
10
1k
100µ 200µ
5
2
1
Fig.3 DC current gain vs. output
OUTPUT CURRENT : I
current
500µ 1m
Ta=100°C
∗
Rev.A
2m
−40°C
25°C
5m 10m 20m 50m 100m
O
(A)
V
O
=5V
2/3