EMH11T2R Rohm Semiconductor, EMH11T2R Datasheet - Page 2
![TRANS DUAL NPN 50V 50MA EMT6](/photos/5/43/54320/emt6_emt6_pkg_sml.jpg)
EMH11T2R
Manufacturer Part Number
EMH11T2R
Description
TRANS DUAL NPN 50V 50MA EMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.EMH11T2R.pdf
(4 pages)
Specifications of EMH11T2R
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT6
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Transistor Case
RoHS Compliant
Dc Current Gain Hfe
30
Transistor Case Style
EMT
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EMH11T2R
EMH11T2RTR
EMH11T2RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EMH11T2R
Manufacturer:
ROHM
Quantity:
2 881
Part Number:
EMH11T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
∗
∗
∗
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Supply voltage
Input voltage
Output current
Collector current
Power
dissipation
Storage temperature
Transition frequency of the device
Absolute maximum ratings (Ta=25°C)
Junction temperature
Electrical characteristics (Ta=25°C)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Electrical characteristic curves
500m
200m
100m
Fig.1 Input voltage vs. output current
100
50
20
10
100µ 200µ
5
2
1
Parameter
(ON characteristics)
Parameter
OUTPUT CURRENT : I
500µ 1m
Ta=−40°C
EMH11,UMH11N
IMH11A
100°C
25°C
2m
5m 10m 20m 50m 100m
Symbol
R
V
O
V
V
I
O (off)
R
O (on)
G
2
(A)
f
I (off)
I (on)
I
T
/R
I
V
1
I
O
1
=0.3V
Min.
0.8
Symbol
30
I
−
−
3
−
−
−
7
C (Max.)
Tstg
V
V
Pd
I
Tj
CC
O
IN
Fig.2 Output current vs. input voltage
Typ.
250
0.1
500µ
200µ
100µ
10
10m
−
−
−
−
−
1
50µ
20µ
10µ
5m
2m
1m
1µ
5µ
2µ
0
(OFF characteristics)
Ta=100°C
150 (TOTAL)
300 (TOTAL)
−55 to +150
Max.
0.88
0.5
0.3
0.5
1.2
−40°C
0.5
13
−
−
−
Limits
25°C
INPUT VOLTAGE : V
−10
100
150
50
40
50
1
MHz
Unit
mA
µA
kΩ
V
V
−
−
1.5
V
V
V
I
V
V
V
O
CE
CC
O
I
CC
O
/I
=5V
2
I (off)
Unit
mW
=0.3V, I
=5V, I
mA
mA
I
°C
°C
=10V, I
=10mA/0.5mA
=5V, I
=50V, V
V
V
(V)
V
2.5
EMH11 / UMH11N / IMH11A
CC
O
∗
∗
O
=5V
=5mA
O
E
1
2
=100µA
=−5mA, f=100MHz
=10mA
I
=0V
Conditions
3
−
−
500
200
100
50
20
10
1k
100µ 200µ
5
2
1
Fig.3 DC current gain vs. output
OUTPUT CURRENT : I
current
500µ 1m
Ta=100°C
∗
Rev.A
2m
−40°C
25°C
5m 10m 20m 50m 100m
O
(A)
V
O
=5V
2/3