MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 34

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MT46H16M16LFBF-6:H

Manufacturer Part Number
MT46H16M16LFBF-6:H
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Series
-r

Specifications of MT46H16M16LFBF-6:H

Package
60VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
166 MHz
Maximum Random Access Time
6.5|5 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
60-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H16M16LFBF-6:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46H16M16LFBF-6:H
Quantity:
568
Part Number:
MT46H16M16LFBF-6:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
DESELECT
NO OPERATION
LOAD MODE REGISTER
ACTIVE
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Notes:
Table 14: DM Operation Truth Table
The DESELECT function (CS# HIGH) prevents new commands from being executed by
the device. Operations already in progress are not affected.
The NO OPERATION (NOP) command is used to instruct the selected device to perform
a NOP. This prevents unwanted commands from being registered during idle or wait
states. Operations already in progress are not affected.
The mode registers are loaded via inputs A[0:n]. See mode register descriptions in Stand-
ard Mode Register (page 49) and Extended Mode Register (page 53). The LOAD
MODE REGISTER command can only be issued when all banks are idle, and a subse-
quent executable command cannot be issued until
The ACTIVE command is used to activate a row in a particular bank for a subsequent
access. The values on the BA0 and BA1 inputs select the bank, and the address provided
on inputs A[0:n] selects the row. This row remains active for accesses until a PRE-
CHARGE command is issued to that bank. A PRECHARGE command must be issued
before opening a different row in the same bank.
Name (Function)
Write enable
Write inhibit
1. Used to mask write data; provided coincident with the corresponding data.
2. All states and sequences not shown are reserved and/or illegal.
34
256Mb: x16, x32 Mobile LPDDR SDRAM
DM
H
L
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
MRD is met.
Valid
DQ
X
©2008 Micron Technology, Inc. All rights reserved.
Commands
Notes
1, 2
1, 2

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