MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 85

• Manufacturer Part Number: MT46H16M16LFBF-6:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H16M16LFBF-6:H

• Package: 60VFBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 166 MHz
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 46: Bank Write – With Auto Precharge
Command
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
1
t
t
IS
IS
NOP
T0
t
4
t
IH
IH
Notes:
t
t
IS
ACTIVE
IS
Bank x
Row
Row
T1
t
IH
t
IH
7. Refer to Figure 29 (page 66) and Figure 30 (page 67) for DQS and DQ timing details.
8. D
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. D
t
CK
these times.
t
OUT
IN
t
RCD
RAS
n = data-out from column n.
NOP
n = data out from column n.
T2
4
t
CH
t
CL
t
t
WRITE
WPRES
Bank x
IS
Col n
T3
Note 3
t
t
IH
DQSS (NOM)
2
85
t
DS
NOP
D
T4
256Mb: x16, x32 Mobile LPDDR SDRAM
IN
t
WPRE
4
t
DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP
T5
t
4
DQSH
T5n
t
WPST
NOP
T6
4
Don’t Care
©2008 Micron Technology, Inc. All rights reserved.
Auto Precharge
t
WR
NOP
T7
4
Transitioning Data
NOP
T8
4
t
RP