MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 92

• Manufacturer Part Number: MT46H16M16LFBF-6:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H16M16LFBF-6:H

• Package: 60VFBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 166 MHz
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 52: Deep Power-Down Mode
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
CKE
CK#
CK
All banks idle with no
activity on the data bus
1
Notes:
NOP
T0
1. Clock must be stable prior to CKE going HIGH.
2. DPD = deep power-down.
3. Upon exit of deep power-down mode, a full DRAM initialization sequence is required.
t
IS
DPD
T1
Enter deep power-down mode
2
T2
(
(
(
)
(
)
(
t
)
)
)
(
CKE
(
(
(
)
(
)
)
)
)
92
256Mb: x16, x32 Mobile LPDDR SDRAM
Ta0
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
Ta1
Exit deep power-down mode
T = 200µs
©2008 Micron Technology, Inc. All rights reserved.
Ta2
NOP
Power-Down
Don’t Care
Ta3
PRE
3