MT48LC4M16A2P-6:G Micron Technology Inc, MT48LC4M16A2P-6:G Datasheet - Page 45
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MT48LC4M16A2P-6:G
Manufacturer Part Number
MT48LC4M16A2P-6:G
Description
DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC4M16A2P-75G_TR.pdf
(72 pages)
Specifications of MT48LC4M16A2P-6:G
Density
64 Mb
Maximum Clock Rate
166 MHz
Package
54TSOP-II
Address Bus Width
14 Bit
Operating Supply Voltage
3.3 V
Maximum Random Access Time
5.5 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (4M x 16)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-TSOP II
Organization
4Mx16
Address Bus
14b
Access Time (max)
5.5ns
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48LC4M16A2P-6:G
Manufacturer:
MICRON
Quantity:
3 000
Table 12:
Table 13:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
Parameter
Die Revision
Operating case temperature:
Commercial
Automotive
Junction temperature:
Commercial
Industrial
Automotive
Ambient temperature:
Commercial
Industrial
Automotive
Peak reflow temperature
G
Industrial
Temperature Limits
Thermal Impedance Simulated Values
Package
Notes:
Notes:
54-ball
VFBGA
54-pin
TSOP
1. MAX operating case temperature, T
2. Device functionality is not guaranteed if the device exceeds maximum T
3. All temperature specifications must be satisfied.
4. The case temperature should be measured by gluing a thermocouple to the top center of
5. Operating ambient temperature surrounding the package.
1. For designs expected to last beyond the die revision listed, contact Micron Applications
2. Thermal resistance data is sampled from multiple lots, and the values should be viewed as
3. These are estimates; actual results may vary.
Substrate
side of the device, as shown in Figure 33 and Figure 34 on page 46.
the component. This should be done with a 1mm bead of conductive epoxy, as defined by
the JEDEC EIA/JESD51 standards. Care should be taken to ensure the thermocouple bead is
touching the case.
Engineering to confirm thermal impedance values.
typical.
4-layer
2-layer
4-layer
θ JA (°C/W)
Airflow =
0m/s
70.5
80.6
64
45
θ JA (°C/W)
Airflow =
1m/s
61.2
67.7
57.1
Symbol
C
, is measured in the center of the package on the top
T
PEAK
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
T
A
C
J
θ JA (°C/W)
Airflow =
2m/s
Min
57.2
61.5
53.5
–40
–40
–40
–40
-40
-40
0
0
0
–
64Mb: x4, x8, x16 SDRAM
Electrical Specifications
Max
105
110
105
260
80
90
85
95
70
85
θ JB (°C/W)
©2000 Micron Technology, Inc. All rights reserved.
54.6
46.1
45.7
Units
C
°C
°C
°C
°C
during operation.
θ JC (°C/W)
13.7
1, 2, 3, 4
4.9
Notes
3, 5
3