MT48LC4M16A2P-6:G Micron Technology Inc, MT48LC4M16A2P-6:G Datasheet - Page 57

• Manufacturer Part Number: MT48LC4M16A2P-6:G
• Description: DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M16A2P-6:G

• Density: 64 Mb
• Maximum Clock Rate: 166 MHz
• Package: 54TSOP-II
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 5.5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP II
• Organization: 4Mx16
• Address Bus: 14b
• Access Time (max): 5.5ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 40:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
DQML, DQMH
A0–A9, A11
COMMAND
BA0, BA1
DQM /
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
READ – Without Auto Precharge
ACTIVE
ROW
ROW
BANK
T0
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a “manual”
2. x16: A8, A9 and A11 = “Don’t Care”
DISABLE AUTO PRECHARGE
PRECHARGE.
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
t CMS
t CL
COLUMN m
BANK
T2
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
t AC
57
T4
D
NOP
OUT
t OH
t AC
m
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
T5
OUT
NOP
t OH
m+1
t AC
SINGLE BANKS
ALL BANKS
PRECHARGE
BANK(S)
D
T6
OUT
t OH
64Mb: x4, x8, x16 SDRAM
m+2
t RP
t AC
©2000 Micron Technology, Inc. All rights reserved.
D
T7
NOP
OUT
t OH
m+3
Timing Diagrams
t HZ
BANK
ACTIVE
ROW
ROW
T8
DON’T CARE
UNDEFINED