MT48LC4M16A2P-6:G Micron Technology Inc, MT48LC4M16A2P-6:G Datasheet - Page 68
![DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II Tray](/photos/7/22/72261/557-54-tsop_sml.jpg)
MT48LC4M16A2P-6:G
Manufacturer Part Number
MT48LC4M16A2P-6:G
Description
DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TSOP-II Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC4M16A2P-75G_TR.pdf
(72 pages)
Specifications of MT48LC4M16A2P-6:G
Density
64 Mb
Maximum Clock Rate
166 MHz
Package
54TSOP-II
Address Bus Width
14 Bit
Operating Supply Voltage
3.3 V
Maximum Random Access Time
5.5 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (4M x 16)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-TSOP II
Organization
4Mx16
Address Bus
14b
Access Time (max)
5.5ns
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48LC4M16A2P-6:G
Manufacturer:
MICRON
Quantity:
3 000
Figure 51:
DQML, DQMH
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
COMMAND
A0–A9, A11
BA0, BA1
DQM /
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK 0
T0
ROW
ROW
Alternating Write Accesses
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
t CK
T1
NOP
1. For this example, BL = 4.
2. x16: A8, A9 and A11 = “Don’t Care”
ENABLE AUTO PRECHARGE
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
t CMS
t CL
t DS
COLUMN m 2
BANK 0
WRITE
T2
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
ACTIVE
BANK 1
IN
T4
ROW
ROW
m + 2
68
t DH
t RCD - BANK 1
t DS
D
IN
T5
NOP
m + 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR - BANK 0
ENABLE AUTO PRECHARGE
t DS
COLUMN b 2
BANK 1
WRITE
T6
D
IN
t DH
b
64Mb: x4, x8, x16 SDRAM
t DS
D
t RP - BANK 0
NOP
IN
T7
b + 1
t DH
©2000 Micron Technology, Inc. All rights reserved.
t DS
Timing Diagrams
D
IN
NOP
T8
b + 2
t DH
t DS
D
BANK 0
ACTIVE
IN
T9
ROW
ROW
b + 3
t
t
RCD - BANK 0
WR - BANK 1
t DH
DON’T CARE