JS28F320J3F75A NUMONYX, JS28F320J3F75A Datasheet - Page 22

• Manufacturer Part Number: JS28F320J3F75A
• Description: PARALLEL NOR
• Manufacturer: NUMONYX

6.2
Table 8:
6.3
Table 9:
Notes:
1.
2.
Datasheet
22
Notes:
1.
2.
3.
4.
5.
6.
Symbol
V
V
V
V
PENLK
V
V
V
PENH
LKO
OH
IH
OL
IL
Symbol
C
C
Sampled, not 100% tested.
T
OUT
Includes STS.
Sampled, not 100% tested.
Block erases, programming, and lock-bit configurations are inhibited when V
range between V
Block erases, programming, and lock-bit configurations are inhibited when V
between V
Includes all operational modes of the device.
Input/Output signals can undershoot to -1.0V referenced to V
less, the V
A
IN
= -40 °C to +85 °C, V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Erase and Lock-Bit Operations
V
or Lock-Bit Operations
V
PEN
PEN
CC
DC Voltage Characteristics
Capacitance
Lockout Voltage
during Block Erase, Program,
DC Voltage specifications
Lockout during Program,
Capacitance
LKO
CCQ
V
V
CCQ
CC
(min) and V
valid range is referenced to V
Parameter
PENLK
(max) and V
CC
CC
= V
(min), and above V
Output Capacitance
CCQ
Input Capacitance
Parameter
= 0 to 3.6 V.
PENH
Numonyx
(min), and above V
0.85 × V
V
SS
CCQ
1
–0.5
.
Min
2.0
2.7
—
—
—
—
CC
–
®
0.2
CCQ
(max).
Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
2.7 - 3.6 V
2.7 - 3.6 V
PENH
SS
V
CCQ
and can overshoot to V
(max).
Max
0.8
0.4
0.2
2.2
3.6
2.0
—
—
+ 0.5
Type
6
4
CC
PEN
< V
Unit
≤ V
V
V
V
V
V
V
V
V
V
LKO
PENLK
Max
7
5
, and not guaranteed in the range
CCQ
V
V
I
V
V
I
V
V
I
V
V
I
, and not guaranteed in the
OL
OL
OH
OH
CC
CCQ
CC
CCQ
CC
CCQ
CC
CCQ
Test Conditions
+ 1.0V for duration of 2ns or
= 2 mA
= 100 µA
= –2.5 mA
= –100 µA
= V
= V
= V
= V
= V
= V
= V
= V
Unit
pF
pF
CC
CC
CCMIN
CCMIN
CCQ
CCQ
CCQ
CCQ
—
—
—
—
—
Min
Min
Min
Min
Min
Min
V
Condition
V
OUT
IN
= 0.0 V
March 2010
= 0.0 V
208032-02
Notes
2, 5, 6
2, 5, 6
1, 2
1, 2
2, 3
3
4
2