LH28F640BFHE-PBTL70A Sharp Microelectronics, LH28F640BFHE-PBTL70A Datasheet - Page 12

• Manufacturer Part Number: LH28F640BFHE-PBTL70A
• Description: Flash Mem Parallel 3V/3.3V 64M-Bit 4M x 16 70ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F640BFHE-PBTL70A

• Package: 48TSOP
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 127
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

NOTES:
1. Refer to DC Characteristics. When V
2. X can be V
3. RST# at GND±0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, (page buffer) program or OTP program are reliably executed
5. Refer to Table 6 for valid D
6. Never hold OE# low and WE# low at the same timing.
7. Refer to Appendix of LH28F640BF series for more information about query code.
Read Array
Output Disable
Standby
Reset
Read Identifier
Codes/OTP
Read Query
Write
and V
when V
Mode
PPH1/2
PP
=V
IL
voltages.
PPH1/2
or V
Notes
4,5,6
6,7
6
3
6
IH
and V
for control pins and addresses, and V
RST#
V
V
V
V
V
V
V
CC
IH
IH
IH
IH
IH
IH
IL
IN
=2.7V-3.6V.
during a write operation.
Table 6. Bus Operation
CE#
V
V
V
V
V
V
X
IH
IL
IL
IL
IL
IL
PP
≤V
PPLK
OE#
V
V
V
V
V
X
X
IL
IH
IL
IL
IH
, memory contents can be read, but cannot be altered.
LHF64FG8
WE#
V
V
V
V
V
X
X
IH
IH
IH
IH
IL
(1, 2)
PPLK
Table 3 and
Appendix
or V
Address
Table 4
See
See
X
X
X
X
X
PPH1/2
for V
V
X
X
X
X
X
X
X
PP
PP
. See DC Characteristics for V
Table 3 and
Appendix
DQ
High Z
High Z
High Z
Table 4
D
D
See
See
OUT
IN
0-15
Rev. 2.45
PPLK
9