M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 32

• Manufacturer Part Number: M29W128GH70ZA6E
• Description: Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W128GH70ZA6E

• Package: 64TBGA
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Table 10.
1. The device doesn’t tolerate FFh as a valid command, and once FFh is issued to the device, the M29W128G will enter
2. X don’t care, PA program address, PD program data, BAd any address in the block. All values in the table are in
3. These cells represent read cycles. The other cells are write cycles.
4. The auto select addresses and data are given in
5. In unlock bypass, the first two unlock cycles are no more needed (see
32/94
Read/Reset
Auto
Select
Program
Chip Erase
Block Erase
Erase/Program Suspend
Erase/Program Resume
Read CFI Query
unexpected state. Adding a F0h command systematically after FFh command is necessary.
hexadecimal.
method (8-bit
that is ‘don’t care’.
Table 13: Fast program commands, 16-bit
Command
(5)
Manufacturer code
Device code
Extended memory
block protection
indicator
Block protection
status
Standard commands, 8-bit mode
mode), and
(1)
Table 8: Block protection - auto select mode - programmer method (8-bit
6+
1
3
3
4
6
1
1
1
Add
AAA
AAA
AAA
AAA
AAA
AA
X
X
X
1st
mode).
Data Add Data
AA
AA
AA
AA
AA
F0
B0
98
30
Table 6: Read electronic signature - auto select mode - programmer
555
555
555
555
555
2nd
55
55
55
55
55
Add
AAA
AAA
AAA
AAA
X
Table 12: Fast program commands, 8-bit mode
Bus operations
3rd
Data Add Data Add Data Add Data
A0
F0
90
80
80
AAA
AAA
(3)(4)
PA
4th
(2)
(3)(4)
PD
AA
AA
555
555
mode), except for A9
5th
55
55
AAA
BAd
6th
and
10
30