M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 66

• Manufacturer Part Number: M29W128GH70ZA6E
• Description: Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
• Manufacturer: NUMONYX

Specifications of M29W128GH70ZA6E

• Package: 64TBGA
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Figure 17. Write enable controlled program waveforms (8-bit mode)
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check
2. PA is the address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (see
4.
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of status register data polling bit and by a read operation that outputs the data, DOUT, programmed by the previous
Program command.
SeeTable 27: Write AC characteristics, write enable
and
Table 26: Read AC characteristics
DQ0-DQ7
A0-A22/
A–1
E
G
W
tAVAV
tGHWL
tELWL
tWLWH
tDVWH
3rd cycle
tAVWL
for details on the timings.
555h
AOh
4th cycle
tWHEH
tWHDX
PA
controlled,
tWHWL
PD
tWLAX
Table 28: Write AC characteristics, chip enable controlled
tWHWH1
Data Polling
Section 7.2.1: Data polling bit
PA
DQ7
D OUT
tAVAV
tGHQZ
Read cycle
D OUT
tELQV
tGLQV
(DQ7)).
tAXQX
AI13333