M29W128GH70ZA6E NUMONYX, M29W128GH70ZA6E Datasheet - Page 59

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M29W128GH70ZA6E

Manufacturer Part Number
M29W128GH70ZA6E
Description
Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M29W128GH70ZA6E

Package
64TBGA
Cell Type
NOR
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
128KByte x 128
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Part Number:
M29W128GH70ZA6E
Manufacturer:
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Quantity:
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9
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 22: Operating and AC measurement
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 22.
1. Only available upon customer request.
Figure 10. AC measurement load circuit
V
V
Ambient operating temperature
(temperature range 1)
Ambient operating temperature
(temperature range 3)
Ambient operating temperature
(temperature range 6)
Load capacitance (C
Input rise and fall times
Input pulse voltages
Input and output timing ref. voltages
CC
CCQ
supply voltage
supply voltage (V
Operating and AC measurement conditions
Parameter
L
)
CCQ
V PP
0.1 µF
V
CC
C L includes JIG capacitance
)
V CC
0.1 µF
DEVICE
UNDER
Min
2.7
2.7
TEST
70 or 60
conditions. Designers should check that the
0
40
40
0 to V
V
CCQ
M29W128GH, M29W128GL
30
CCQ
(1)
/2
Max
125
3.6
3.6
70
85
10
ns
C L
V CCQ
1.65
Min
AI05558b
2.7
0
40
40
25 k
25 k
0 to V
V
80 ns
CCQ
30
CCQ
/2
Max
125
3.6
3.6
70
85
10
Unit
°C
°C
°C
pF
ns
V
V
V
V
59/94

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