PIMD2,125 NXP Semiconductors, PIMD2,125 Datasheet - Page 5

• Manufacturer Part Number: PIMD2,125
• Description: TRANS ARRAY NPN/PNP SC70-6
• Manufacturer: NXP Semiconductors

Specifications of PIMD2,125

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057905125

NXP Semiconductors
7. Characteristics
PEMD2_PIMD2_PUMD2_7
Product data sheet
Table 8.
T
Symbol
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
c
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input
voltage
on-state input
voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance V
Characteristics
TR1 (NPN)
TR2 (PNP)
Rev. 07 — 24 September 2008
NPN/PNP resistor-equipped transistors; R1 = 22 k , R2 = 22 k
Conditions
V
V
V
T
V
V
I
V
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 C
= 10 mA; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
PEMD2; PIMD2; PUMD2
C
C
C
E
E
B
B
B
= 0 A
= 5 mA
= 100 A
C
= i
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= 5 mA
e
= 0 A;
Min
-
-
-
-
60
-
-
2.5
15.4
0.8
-
-
Typ
-
-
-
-
-
-
1.1
1.7
22
1
-
-
© NXP B.V. 2008. All rights reserved.
Max
100
1
50
180
-
150
0.8
-
28.6
1.2
2.5
3
Unit
nA
mV
V
V
k
pF
pF
A
A
A
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