PIMD2,125 NXP Semiconductors, PIMD2,125 Datasheet - Page 6

• Manufacturer Part Number: PIMD2,125
• Description: TRANS ARRAY NPN/PNP SC70-6
• Manufacturer: NXP Semiconductors

Specifications of PIMD2,125

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057905125

NXP Semiconductors
PEMD2_PIMD2_PUMD2_7
Product data sheet
Fig 1.
Fig 3.
V
h
(V)
I(on)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
FE
10
10
10
10
1
1
3
2
10
1
10
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
V
TR1 (NPN): On-state input voltage as a
function of collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 5 V
= 0.3 V
= 150 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
I
I
C
C
006aaa038
(mA)
006aaa040
(mA)
Rev. 07 — 24 September 2008
NPN/PNP resistor-equipped transistors; R1 = 22 k , R2 = 22 k
10
10
2
2
Fig 2.
Fig 4.
V
V
CEsat
PEMD2; PIMD2; PUMD2
(V)
(V)
I(off)
10
10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
10
1
1
2
1
10
1
I
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
V
TR1 (NPN): Off-state input voltage as a
function of collector current; typical values
C
amb
amb
amb
amb
amb
amb
CE
2
/I
B
= 5 V
= 20
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
(1)
(2)
(3)
10
1
10
(1)
(2)
(3)
1
I
C
(mA)
© NXP B.V. 2008. All rights reserved.
I
C
006aaa039
(mA)
006aaa041
10
10
2
1
6 of 16