PUML1,115 NXP Semiconductors, PUML1,115 Datasheet

TRANS ARRAY NPN W/RES SC-88

PUML1,115

Manufacturer Part Number
PUML1,115
Description
TRANS ARRAY NPN W/RES SC-88
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUML1,115

Transistor Type
1 NPN Pre-Biased, 1 NPN
Current - Collector (ic) (max)
100mA, 200mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V / 210 @ 2mA, 10V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (max)
1µA
Frequency - Transition
230MHz
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934062098115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN general-purpose transistor and NPN Resistor-Equipped Transistor (RET) in one
SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package.
I
I
I
I
I
I
I
I
I
I
Table 1.
Symbol Parameter
TR1 (general-purpose transistor)
V
I
h
TR2 (resistor-equipped transistor)
V
I
R1
R2/R1
C
O
FE
CEO
CEO
PUML1/DG
50 V, 200 mA NPN general-purpose transistor/
100 mA NPN resistor-equipped transistor
Rev. 01 — 14 July 2008
General-purpose transistor:
Resistor-equipped transistor:
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Very small SMD plastic package
AEC-Q101 qualified
Inverter and switches
Low-frequency amplifier
Driver stages
N
N
200 mA collector current I
Built-in bias resistors
collector-emitter voltage
collector current
DC current gain
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Quick reference data
C
Conditions
open base
V
I
open base
C
CE
= 2 mA
= 10 V;
Min
-
-
210
-
-
7
0.8
Product data sheet
Typ
-
-
-
-
-
10
1
Max
50
200
340
50
100
13
1.2
Unit
V
mA
V
mA
k

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PUML1,115 Summary of contents

Page 1

PUML1/ 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor (RET) in one SOT363 (SC-88) very small Surface-Mounted ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PUML1/DG 4. Marking Table 4. Type number PUML1/DG [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol P tot TR2 (resistor-equipped transistor) V CBO V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Fig 1. ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol Per transistor R th(j-a) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint duty cycle = 1 Z th(j-a) 0.75 ( K/W ) 0.5 0.33 2 0.2 10 0.1 0.05 0. FR4 PCB, standard footprint Fig 2. ...

Page 5

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter TR1 (general-purpose transistor) I CBO I EBO CEsat TR2 (resistor-equipped transistor) I CBO I CEO I EBO CEsat V I(off) V I(on) R1 R2/ PUML1_DG_1 Product data sheet 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET Characteristics Conditions collector-base cut-off ...

Page 6

... NXP Semiconductors 500 h FE (1) 400 300 (2) 200 (3) 100 ( 150 C amb ( amb ( amb Fig 3. TR1: DC current gain as a function of collector current; typical values 1.3 V BEsat (V) (1) 0.9 (2) (3) 0 amb ( amb ( 150 C amb Fig 5. TR1: Base-emitter saturation voltage as a function of collector current; typical values ...

Page 7

... NXP Semiconductors ( 150 C amb ( amb ( amb Fig 7. TR2: DC current gain as a function of collector current; typical values 10 V I(on) (V) (1) ( amb ( amb ( 100 C amb Fig 9. TR2: On-state input voltage as a function of collector current; typical values PUML1_DG_1 Product data sheet 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET ...

Page 8

... NXP Semiconductors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is suitable for use in automotive applications. 9. Package outline Fig 11. Package outline SOT363 (SC-88) 10 ...

Page 9

... NXP Semiconductors 11. Soldering Fig 12. Reflow soldering footprint SOT363 (SC-88) 4.5 Fig 13. Wave soldering footprint SOT363 (SC-88) PUML1_DG_1 Product data sheet 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 01 — 14 July 2008 PUML1/DG 0 ...

Page 10

... NXP Semiconductors 12. Revision history Table 9. Revision history Document ID Release date PUML1_DG_1 20080714 PUML1_DG_1 Product data sheet 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET Data sheet status Change notice Product data sheet - Rev. 01 — 14 July 2008 PUML1/DG Supersedes - © NXP B.V. 2008. All rights reserved. ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information Soldering ...

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