PUML1,115 NXP Semiconductors, PUML1,115 Datasheet - Page 3

• Manufacturer Part Number: PUML1,115
• Description: TRANS ARRAY NPN W/RES SC-88
• Manufacturer: NXP Semiconductors

Specifications of PUML1,115

• Transistor Type: 1 NPN Pre-Biased, 1 NPN
• Current - Collector (ic) (max): 100mA, 200mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 210 @ 2mA, 10V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 1µA
• Frequency - Transition: 230MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062098115

NXP Semiconductors
PUML1_DG_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
P
TR2 (resistor-equipped transistor)
V
V
V
V
I
I
P
Per device
P
T
T
T
O
CM
Fig 1.
j
amb
stg
tot
CBO
CEO
EBO
I
tot
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
FR4 PCB, standard footprint
Per transistor: Power derating curve
Parameter
total power dissipation
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Limiting values
positive
negative
(mW)
50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET
P
tot
300
200
100
Rev. 01 — 14 July 2008
0
…continued
75
25
25
Conditions
T
open emitter
open base
open collector
single pulse;
t
T
T
p
amb
amb
amb
1 ms
75
25 C
25 C
25 C
125
T
006aab254
amb
[1]
[1]
[1]
( C)
175
Min
-
-
-
-
-
-
-
-
-
-
-
55
65
PUML1/DG
© NXP B.V. 2008. All rights reserved.
Max
200
50
50
10
+40
100
100
200
300
150
+150
+150
10
Unit
mW
V
V
V
V
V
mA
mA
mW
mW
C
C
C
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