PUML1,115 NXP Semiconductors, PUML1,115 Datasheet - Page 4

• Manufacturer Part Number: PUML1,115
• Description: TRANS ARRAY NPN W/RES SC-88
• Manufacturer: NXP Semiconductors

Specifications of PUML1,115

• Transistor Type: 1 NPN Pre-Biased, 1 NPN
• Current - Collector (ic) (max): 100mA, 200mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 210 @ 2mA, 10V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 1µA
• Frequency - Transition: 230MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062098115

NXP Semiconductors
6. Thermal characteristics
PUML1_DG_1
Product data sheet
Fig 2.
Z
( K/W )
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration
5
duty cycle =
0.05
0.02
0.01
0.5
0.2
0.1
1
0
0.75
0.33
10
4
Table 6.
[1]
Symbol
Per transistor
R
Per device
R
th(j-a)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to ambient
Thermal characteristics
3
10
50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET
2
Rev. 01 — 14 July 2008
10
1
Conditions
in free air
in free air
1
10
[1]
[1]
Min
-
-
PUML1/DG
10
2
Typ
-
-
© NXP B.V. 2008. All rights reserved.
t
p
006aab255
(s)
Max
625
417
10
3
Unit
K/W
K/W
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