2N5088BU Fairchild Semiconductor, 2N5088BU Datasheet

2N5088BU

Manufacturer Part Number

2N5088BU

Description

NPN LL LN HI GAIN AMP TRANS TO92

Manufacturer

Fairchild Semiconductor

Datasheet

1.MMBT5089.pdf (7 pages)

Specifications of 2N5088BU

Transistor Type

NPN

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

30V

Vce Saturation (max) @ Ib, Ic

500mV @ 1mA, 10mA

Dc Current Gain (hfe) (min) @ Ic, Vce

300 @ 100µA, 5V

Power - Max

625mW

Frequency - Transition

50MHz

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Configuration

Single

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

30 V

Emitter- Base Voltage Vebo

4.5 V

Continuous Collector Current

0.1 A

Maximum Dc Collector Current

0.1 A

Power Dissipation

625 mW

Maximum Operating Frequency

50 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

300

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N5088BU

Manufacturer:

FS8

Quantity:

10 569

Current page: 1 of 7
Download datasheet (98Kb)

2001 Fairchild Semiconductor Corporation

Symbol

CEO

CBO

EBO

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

NPN General Purpose Amplifier

Thermal Characteristics

Absolute Maximum Ratings*

, T

This device is designed for low noise, high gain, general purpose

amplifier applications at collector currents from 1 A to 50 mA.

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

stg

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Derate above 25 C

2N5088

2N5089

Characteristic

TO-92

Parameter

TA = 25°C unless otherwise noted

Mark: 1Q / 1R

2N5088

2N5089

2N5088

2N5089

SOT-23

MMBT5088

MMBT5089

2N5088

2N5089

83.3

625

200

5.0

Max

-55 to +150

Value

*MMBT5088

*MMBT5089

100

4.5

350

357

2N5088/2N5089/MMBT5088/MMBT5089, Rev A

2.8

Units

mW/ C

Units

C/W

Related parts for 2N5088BU

2N5088BU Summary of contents

Page 1

... P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation MMBT5088 MMBT5089 C SOT-23 Mark 25°C unless otherwise noted Parameter 2N5088 2N5089 2N5088 2N5089 TA = 25°C unless otherwise noted ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage* V Collector-Base Breakdown Voltage (BR)CBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V CE( sat ) ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 1200 125 °C 1000 800 600 25 °C 400 - 40 °C 200 0 0.01 0.03 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector ...

Page 4

Typical Characteristics Input and Output Capacitance vs Reverse Bias Voltage REVERSE BIAS VOLTAGE (V) Normalized Collector-Cutoff Current vs Ambient Temperature 1000 100 100 ...

Page 5

Typical Characteristics Contours of Constant Narrow Band Noise Figure 10,000 5,000 2,000 1,000 500 100 Hz BANDWIDTH 200 = 20 Hz 100 1 10 100 I - COLLECTOR CURRENT ( C Contours of ...

Page 6

Typical Common Emitter Characteristics Typical Common Emitter Characteristics 1.4 1.3 h 1 COLLECTOR VOLTAGE (V) CE Typical Common Emitter Characteristics 100 10 h ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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