2N5088BU Fairchild Semiconductor, 2N5088BU Datasheet - Page 6
2N5088BU
Manufacturer Part Number
2N5088BU
Description
NPN LL LN HI GAIN AMP TRANS TO92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT5089.pdf
(7 pages)
Specifications of 2N5088BU
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
500mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 100µA, 5V
Power - Max
625mW
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
4.5 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
625 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
300
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5088BU
Manufacturer:
FS8
Quantity:
10 569
Typical Common Emitter Characteristics
Typical Common Emitter Characteristics
1.4
1.3
1.2
1.1
0.9
0.8
1
0
h
h
h
re
ie
fe
h
oe
5
V
CE
- COLLECTOR VOLTAGE (V)
10
Typical Common Emitter Characteristics
0.01
100
15
0.1
10
1
0.1 0.2
h
h
f = 1.0kHz
h
oe
fe
ie
and h
20
I = 1.0mA
f = 1.0kHz
T = 25 C
C
A
I - COLLECTOR CURRENT (mA)
re
C
0.5
h
h
h
h
ie
re
oe
fe
°
1
25
2
5
Typical Common Emitter Characteristics
h
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
h
ie
1
-100
oe
10
(f = 1.0 kHz)
NPN General Purpose Amplifier
I = 1.0mA
V
f = 1.0kHz
C
CE
20
h
h
h
= 5.0V
h
h
oe
fe
re
fe
T - JUNCTIO N TEMP ERATURE ( C)
re
-50
J
50
h
100
ie
0
50
h
ie
100
°
h
h
h
oe
re
fe
(continued)
150
3