2N5088BU Fairchild Semiconductor, 2N5088BU Datasheet - Page 3
2N5088BU
Manufacturer Part Number
2N5088BU
Description
NPN LL LN HI GAIN AMP TRANS TO92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT5089.pdf
(7 pages)
Specifications of 2N5088BU
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
500mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 100µA, 5V
Power - Max
625mW
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
4.5 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
625 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
300
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5088BU
Manufacturer:
FS8
Quantity:
10 569
Typical Characteristics
1200
1000
0.8
0.6
0.4
0.2
800
600
400
200
1
0.1
0
0.01 0.03
Voltage vs Collector Current
Typical Pulsed Current Gain
Base-Emitter Saturation
vs Collector Current
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
0.1
125 °C
1
25 °C
0.3
- 40 °C
25 °C
1
- 40 °C
125 °C
0.1
10
3
1
25
10
V
10
V
CE
CB
vs Ambient Temperature
Collector-Cutoff Current
= 5.0 V
= 10
= 45V
T - AMBIE NT TEMP ERATURE ( C)
30
50
A
100
100
75
100
0.25
0.15
0.05
0.8
0.6
0.4
0.2
0.3
0.2
0.1
1
0.1
0.1
NPN General Purpose Amplifier
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
= 10
125
°
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
Collector Current
- 40 °C
150
1
1
25 °C
25 °C
125 °C
10
125 °C
V
10
CE
- 40 °C
= 5.0 V
(continued)
100
40