2N5088BU Fairchild Semiconductor, 2N5088BU Datasheet - Page 3

NPN LL LN HI GAIN AMP TRANS TO92

2N5088BU

Manufacturer Part Number
2N5088BU
Description
NPN LL LN HI GAIN AMP TRANS TO92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N5088BU

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
500mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 100µA, 5V
Power - Max
625mW
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
4.5 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
625 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
300
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5088BU
Manufacturer:
FS8
Quantity:
10 569
Typical Characteristics
1200
1000
0.8
0.6
0.4
0.2
800
600
400
200
1
0.1
0
0.01 0.03
Voltage vs Collector Current
Typical Pulsed Current Gain
Base-Emitter Saturation
vs Collector Current
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
0.1
125 °C
1
25 °C
0.3
- 40 °C
25 °C
1
- 40 °C
125 °C
0.1
10
3
1
25
10
V
10
V
CE
CB
vs Ambient Temperature
Collector-Cutoff Current
= 5.0 V
= 10
= 45V
T - AMBIE NT TEMP ERATURE ( C)
30
50
A
100
100
75
100
0.25
0.15
0.05
0.8
0.6
0.4
0.2
0.3
0.2
0.1
1
0.1
0.1
NPN General Purpose Amplifier
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
= 10
125
°
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
Collector Current
- 40 °C
150
1
1
25 °C
25 °C
125 °C
10
125 °C
V
10
CE
- 40 °C
= 5.0 V
(continued)
100
40

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