MPS8099G ON Semiconductor, MPS8099G Datasheet - Page 2

• Manufacturer Part Number: MPS8099G
• Description: TRANSISTOR NPN GP BIPO 80V TO-92
• Manufacturer: ON Semiconductor
• Type: Amplifierr

Specifications of MPS8099G

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100 at 1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 500 mA
• Current, Gain: 75
• Frequency: 150 MHz
• Package Type: TO-92
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 0.4 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Frequency (max): 150MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPS8099G; MPS8099GOS

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
(V
C
C
E
C
C
C
C
C
C
C
CE
CB
EB
CB
EB
= 10 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 100 mAdc, V
= 100 mAdc, I
= 100 mAdc, I
= 10 mAdc, V
= 10 mAdc, V
= 4.0 Vdc, I
= 0.5 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
= 5.0 Vdc, I
C
B
B
E
E
C
C
CE
CE
CE
E
= 0)
B
B
CE
= 0)
= 0)
= 0)
CE
= 0)
= 0)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 5.0 mAdc)
= 10 mAdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
(T
NPN − MPS8099; PNP − MPS8599
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
C
I
BE(on)
C
h
CES
CBO
EBO
f
obo
FE
ibo
T
Min
100
100
150
5.0
0.6
80
80
75
−
−
−
−
−
−
−
Max
300
0.1
0.1
0.1
0.4
0.3
0.8
8.0
30
−
−
−
−
−
−
mAdc
mAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
−