MPS8099G ON Semiconductor, MPS8099G Datasheet - Page 5

• Manufacturer Part Number: MPS8099G
• Description: TRANSISTOR NPN GP BIPO 80V TO-92
• Manufacturer: ON Semiconductor
• Type: Amplifierr

Specifications of MPS8099G

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100 at 1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 500 mA
• Current, Gain: 75
• Frequency: 150 MHz
• Package Type: TO-92
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 0.4 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Frequency (max): 150MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPS8099G; MPS8099GOS

1.0 k
400
200
100
700
500
300
200
100
1.0
0.8
0.6
0.4
0.2
80
60
40
70
50
30
20
10
0
0.2
0.2
1.0
T
Figure 9. Active−Region Safe Operating Area
0.3 0.5
J
T
= 25°C
J
DUTY CYCLE ≤ 10%
= 125°C
0.5
2.0
V
CE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
1.0
Figure 11. DC Current Gain
3.0
V
Figure 13. “ON” Voltages
I
BE(sat)
I
C
C
V
V
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
BE
25°C
CE(sat)
2.0
2.0
−55°C
5.0
@ V
V
@ I
CE
3.0 5.0
CE
@ I
C
7.0
= 5.0 V
/I
NPN
B
= 5.0 V
C
5.0
= 10
/I
B
10
= 10
10
10
NPN − MPS8099; PNP − MPS8599
MPS8098
20
20
20
MPS8099
30
30
50
50
50
http://onsemi.com
100
100
70
200
200
100
5
−1.0 k
−700
−500
−300
−200
−100
300
200
100
−70
−50
−30
−20
−10
1.0
0.8
0.6
0.4
0.2
70
30
50
−0.2
0
0.2
−1.0
Figure 10. Active−Region Safe Operating Area
T
T
−55°C
J
J
25°C
= 25°C
= 125°C
−0.5
0.5
−2.0
DUTY CYCLE ≤ 10%
V
CE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−1.0
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
−3.0
1.0
Figure 12. DC Current Gain
V
Figure 14. “ON” Voltages
BE(sat)
I
I
V
C
C
V
, COLLECTOR CURRENT (mA)
BE
, COLLECTOR CURRENT (mA)
−2.0
CE(sat)
2.0
−5.0
@ V
V
@ I
CE
CE
−7.0
@ I
C
= −5.0 V
/I
−5.0
B
PNP
= 5.0 V
C
5.0
= 10
/I
−10
B
= 10
−10
10
MPS8598
−20
−20
MPS8599
20
−30
−50
50
−50
−100
100
−70
−200
−100
200