MPS8099G ON Semiconductor, MPS8099G Datasheet - Page 6

• Manufacturer Part Number: MPS8099G
• Description: TRANSISTOR NPN GP BIPO 80V TO-92
• Manufacturer: ON Semiconductor
• Type: Amplifierr

Specifications of MPS8099G

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100 at 1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 500 mA
• Current, Gain: 75
• Frequency: 150 MHz
• Package Type: TO-92
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 0.4 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Frequency (max): 150MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPS8099G; MPS8099GOS

−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
2.0
1.6
1.2
0.8
0.4
0
0.02
0.2
Figure 17. Base−Emitter Temperature Coefficient
10 mA
I
C
Figure 15. Collector Saturation Region
=
R
qVB
0.05
0.5
FOR V
20 mA
0.1
1.0
I
C
=
I
BE
C
, COLLECTOR CURRENT (mA)
0.2
I
2.0
B
, BASE CURRENT (mA)
50 mA
I
C
=
NPN
0.5
5.0
−55°C TO 125°C
100 mA
1.0
10
I
C
NPN − MPS8099; PNP − MPS8599
=
2.0
20
5.0
50
200 mA
I
T
C
http://onsemi.com
J
=
= 25°C
100
10
200
20
6
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
2.0
1.6
1.2
0.8
0.4
0
0.02
Figure 18. Base−Emitter Temperature Coefficient
0.2
T
10 mA
J
I
C
= 25°C
R
Figure 16. Collector Saturation Region
=
qVB
0.05
0.5
FOR V
1.0
0.1
I
BE
C
, COLLECTOR CURRENT (mA)
20 mA
I
0.2
I
2.0
C
B
, BASE CURRENT (mA)
=
−55°C TO 125°C
PNP
0.5
5.0
50 mA
I
C
1.0
10
=
2.0
20
100 mA
I
C
=
5.0
50
200 mA
100
I
10
C
=
200
20