MPS8099G ON Semiconductor, MPS8099G Datasheet - Page 4

• Manufacturer Part Number: MPS8099G
• Description: TRANSISTOR NPN GP BIPO 80V TO-92
• Manufacturer: ON Semiconductor
• Type: Amplifierr

Specifications of MPS8099G

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100 at 1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 500 mA
• Current, Gain: 75
• Frequency: 150 MHz
• Package Type: TO-92
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 0.4 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Frequency (max): 150MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPS8099G; MPS8099GOS

1.0 k
700
500
300
200
100
300
200
100
8.0
6.0
4.0
2.0
70
50
30
40
20
10
70
50
30
20
10
0.1
10
1.0
V
I
I
T
C
B1
Figure 3. Current−Gain − Bandwidth Product
J
t
CC
/I
d
T
= 25°C
B
= I
@ V
0.2
J
= 40 V
= 10
= 25°C
B2
2.0
BE(off)
20
0.5
3.0
= 0.5 V
Figure 7. Switching Times
V
I
I
C
C
R
Figure 5. Capacitance
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
1.0
5.0 7.0 10
30
2.0
NPN
50
C
ibo
5.0
NPN − MPS8099; PNP − MPS8599
V
70
20
C
CE
10
obo
= 1.0 V
30
100
20
T
J
5.0 V
t
50 70
t
t
s
= 25°C
f
r
http://onsemi.com
50
200
100
100
4
1.0 k
700
500
300
200
100
300
200
100
8.0
6.0
4.0
2.0
70
50
30
20
10
70
50
30
40
20
10
−1.0
−0.1
−10
t
Figure 4. Current−Gain − Bandwidth Product
d
−0.2
T
@ V
J
= 25°C
−2.0 −3.0
BE(off)
−20
−0.5
= −0.5 V
Figure 8. Switching Times
V
I
I
C
C
R
Figure 6. Capacitance
t
t
t
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
r
, REVERSE VOLTAGE (VOLTS)
s
f
−1.0
−5.0 −7.0
−30
−2.0
PNP
−10
−50
C
−5.0
ibo
C
V
obo
CE
−20 −30
−70
= −1.0 V
−10 −20
−100
−5.0 V
V
I
I
T
T
C
B1
T
J
CC
−50 −70
J
/I
J
= 25°C
B
= 25°C
= I
= 25°C
= −40 V
= 10
−50
B2
−200
−100
−100