BGA2711 T/R NXP Semiconductors, BGA2711 T/R Datasheet - Page 2
![RF Amplifier TAPE-7 MMIC-RFS](/photos/16/0/160094/sot363_sml.jpg)
BGA2711 T/R
Manufacturer Part Number
BGA2711 T/R
Description
RF Amplifier TAPE-7 MMIC-RFS
Manufacturer
NXP Semiconductors
Type
General Purpose Wideband Amplifierr
Datasheet
1.BGA2711115.pdf
(11 pages)
Specifications of BGA2711 T/R
Operating Frequency
1 GHz
Noise Figure
4.8 dB
Bandwidth
3600 MHz
Operating Supply Voltage
5 V
Supply Current
12.6 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA2711,115
NXP Semiconductors
FEATURES
Internally matched to 50
Very wide frequency range
Very flat gain
Unconditionally stable.
APPLICATIONS
Cable systems
LNB IF amplifiers
General purpose
ISM.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
2001 Oct 19
V
I
|s
NF
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
S
SYMBOL
S
L(sat)
MMIC wideband amplifier
21
|
2
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
PARAMETER
f = 1 GHz
f = 1 GHz
f = 1 GHz
CAUTION
2
PINNING
CONDITIONS
Marking code: G2-.
PIN
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
1
3
4
6
Top view
1
6
V
GND2
RF out
GND1
RF in
2
S
5
4
3
MAM455
DESCRIPTION
5
12.6
13.1
4.8
2.8
TYP.
6
Product specification
4
6
MAX.
BGA2711
1
2, 5
3
V
mA
dB
dB
dBm
UNIT