BGA2711 T/R NXP Semiconductors, BGA2711 T/R Datasheet - Page 3

RF Amplifier TAPE-7 MMIC-RFS

BGA2711 T/R

Manufacturer Part Number
BGA2711 T/R
Description
RF Amplifier TAPE-7 MMIC-RFS
Manufacturer
NXP Semiconductors
Type
General Purpose Wideband Amplifierr
Datasheet

Specifications of BGA2711 T/R

Operating Frequency
1 GHz
Noise Figure
4.8 dB
Bandwidth
3600 MHz
Operating Supply Voltage
5 V
Supply Current
12.6 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA2711,115
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL RESISTANCE
CHARACTERISTICS
V
2001 Oct 19
V
I
P
T
T
P
R
I
|s
R
R
NF
BW
P
P
IP3
IP3
S
S
S
SYMBOL
stg
j
SYMBOL
SYMBOL
S
tot
D
L(sat)
L 1 dB
MMIC wideband amplifier
th j-s
21
L IN
L OUT
= 5 V; I
(in)
(out)
|
2
S
= 12.6 mA; f = 1 GHz; T
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
thermal resistance from junction to solder
point
supply current
insertion power gain
return losses input
return losses output
noise figure
bandwidth
saturated load power
load power
input intercept point
output intercept point
PARAMETER
PARAMETER
PARAMETER
j
= 25 C unless otherwise specified.
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
at s
f = 1 GHz
f = 2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
21
2
3 dB below flat gain at 1 GHz
RF input AC coupled
T
s
CONDITIONS
 80 C
3
P
tot
CONDITIONS
= 200 mW; T
CONDITIONS
s
 80 C
10
MIN.
65
MIN.
12.6
13.1
13.9
11
10
18
13
4.8
4.8
3.6
2.8
0.6
0.7
1.8
4.8
8.5
8.3
5.4
TYP.
VALUE
300
Product specification
6
20
200
+150
150
10
16
MAX.
BGA2711
MAX.
V
mA
mW
C
C
dBm
UNIT
K/W
mA
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
UNIT
UNIT

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