PBSS306PX,115 NXP Semiconductors, PBSS306PX,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS306PX,115
• Description: TRANS PNP 100V 3.7A SOT-89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS306PX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 3.7A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 400mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3.7 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059019115; PBSS306PX T/R; PBSS306PX T/R

NXP Semiconductors
7. Characteristics
PBSS306PX_2
Product data sheet
Table 7.
T
[1]
Symbol
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 11 December 2009
Conditions
V
V
T
V
V
V
V
V
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CC
CE
CB
= 150 °C
= −0.5 A; I
= −1 A; I
= −4 A; I
= −4 A; I
= −1 A; I
= −4 A; I
= 0.15 A
= −0.15 A;
= −80 V; I
= −80 V; I
= −5 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −10 V; I
= −10 V; I
= −12.5 V; I
100 V, 3.7 A PNP low V
B
B
B
B
B
= −50 mA
= −400 mA
= −400 mA
= −100 mA
= −400 mA
C
B
C
C
C
C
C
C
E
E
E
= 0 A
= −50 mA
= −0.5 A
= −1 A
= −2 A
= −4 A
= −2 A
= 0 A
= 0 A;
= −100 mA;
= i
C
= −3 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
200
150
100
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS306PX
CEsat
Typ
-
-
-
300
260
175
40
−45
−90
−210
52
−0.81 −0.9
−0.93 −1.05 V
−0.78 −0.85 V
15
185
200
150
175
325
100
50
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
−100
−50
−100
-
-
-
-
−60
−130
−300
75
-
-
-
-
-
-
-
80
Unit
nA
μA
nA
mV
mV
mV
mΩ
V
ns
ns
ns
ns
ns
ns
MHz
pF
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