PBSS306PX,115 NXP Semiconductors, PBSS306PX,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS306PX,115
• Description: TRANS PNP 100V 3.7A SOT-89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS306PX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 3.7A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 400mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3.7 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059019115; PBSS306PX T/R; PBSS306PX T/R

NXP Semiconductors
8. Test information
PBSS306PX_2
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
− I
− I
B
C
V
CC
= −12.5 V; I
oscilloscope
t
d
t
on
Rev. 02 — 11 December 2009
C
V
= −3 A; I
t
I
r
(probe)
450 Ω
Bon
= −0.15 A; I
R1
R2
R
B
V
BB
100 V, 3.7 A PNP low V
Boff
= 0.15 A
R
C
V
CC
DUT
V
o
mgd624
− I
(probe)
450 Ω
Bon
t
− I
s
(100 %)
Boff
t
off
PBSS306PX
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
− I
006aaa266
C
(100 %)
t
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