BCR 101L3 E6327 Infineon Technologies, BCR 101L3 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCR 101L3 E6327
• Description: TRANSISTOR NPN 50V 50MA TSLP3-4
• Manufacturer: Infineon Technologies

Specifications of BCR 101L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 100MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR101L3E6327XT; SP000014850

Thermal Resistance
Parameter
Junction - soldering point
BCR101F
BCR101L3
BCR101T
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
Collector-emitter saturation voltage
I
Input off voltage
I
Input on voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1 For calculation of R
2 Pulse test: t < 300µs; D < 2%
C
C
C
C
C
C
C
CB
EB
CB
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 5 mA, I
= 100 µA, V
= 1 mA, V
= 10 mA, V
= 10 V, I
= 40 V, I
= 10 V, f = 1 MHz
B
E
CE
CE
E
C
= 0.25 mA
B
CE
= 0
CE
= 0
= 0
= 0
2)
= 5 V
= 0.3 V
= 5 V, f = 100 MHz
thJA
= 5 V
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2)
2
f
C
Symbol
R
Symbol
V
V
I
I
h
V
V
V
R
R
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
cb
thJS
1
1
/ R
2
min.
0.5
0.9
50
50
70
70
1
-
-
-
-
-
Values
Value
100
typ.
100
165
1
3
90
60
-
-
-
-
-
-
-
-
max.
100
130
Nov-27-2003
0.3
1.8
1.1
BCR101...
75
3
-
-
-
-
-
MHz
pF
Unit
K/W
Unit
V
nA
µA
-
V
k
-