BCR 101L3 E6327 Infineon Technologies, BCR 101L3 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCR 101L3 E6327
• Description: TRANSISTOR NPN 50V 50MA TSLP3-4
• Manufacturer: Infineon Technologies

Specifications of BCR 101L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 100MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR101L3E6327XT; SP000014850

Total power dissipation P
BCR101F
Total power dissipation P
BCR101T
mW
mW
300
200
150
100
300
200
150
100
50
50
0
0
0
0
20
20
40
40
60
60
80
80
tot
tot
100
100
= (T
= (T
120 °C
120 °C
S
S
)
)
T
T
S
S
150
150
4
Total power dissipation P
BCR101L3
Permissible Puls Load R
BCR101F
K/W
mW
10
300
200
150
100
10
10
10
50
-1
0
2
1
0
10
0
-6
20
10
-5
40
10
-4
60
10
80
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-3
thJS
tot
100
10
= (T
=
Nov-27-2003
BCR101...
-2
120 °C
(t
S
p
s
)
)
T
t
p
S
150
10
0