BCR 101L3 E6327 Infineon Technologies, BCR 101L3 E6327 Datasheet - Page 3

• Manufacturer Part Number: BCR 101L3 E6327
• Description: TRANSISTOR NPN 50V 50MA TSLP3-4
• Manufacturer: Infineon Technologies

Specifications of BCR 101L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 100MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR101L3E6327XT; SP000014850

DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
10
= 5 V (common emitter configuration)
= 0.3V (common emitter configuration)
A
-1
-2
-3
-4
-5
3
2
1
10
10
-4
-1
10
10
FE
i (on)
-3
0
=
= (I
(I
C
)
C
10
10
)
-2
1
A
V
I
V
C
i(on)
10
10
-1
2
3
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
10
10
10
10
10
10
10
10
= 5V (common emitter configuration)
A
A
-1
-2
-3
-4
-2
-3
-4
-5
-6
0.5
0
= (I
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
C
1
), h
1.5
FE
= 20
i(off)
2
=
2.5
(I
C
)
Nov-27-2003
BCR101...
3
V
V
V
V
CEsat
i(off)
0.5
4