BCR 103L3 E6327 Infineon Technologies, BCR 103L3 E6327 Datasheet - Page 3

• Manufacturer Part Number: BCR 103L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSLP3-4
• Manufacturer: Infineon Technologies

Specifications of BCR 103L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 20mA
• Frequency - Transition: 140MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR103L3E6327XT; SP000014756

DC current gain h
V
Input on Voltage V
V
CE
CE
10
10
10
10
10
10
10
10
10
= 5V (common emitter configuration)
= 0.3V (common emitter configuration)
A
-1
-1
-2
-3
-4
3
2
1
0
10
10
-4
-1
10
10
FE
i (on)
-3
0
=
= (I
(I
C
)
C
10
10
)
-2
1
A
V
I
V
C
i(on)
10
10
-1
2
3
Collector-emitter saturation voltage
V
Input off voltage V
V
CEsat
CE
10
10
10
10
10
10
10
10
= 5V (common emitter configuration)
A
A
-2
-3
-4
-5
-6
0.6
2
1
0
0
= (I
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
C
0.8
), h
FE
= 20
1
i(off)
=
1.2
(I
C
)
BCR103...
1.4
2005-06-21
V
V
V
V
CEsat
i(off)
1.7
1