BCR 103L3 E6327 Infineon Technologies, BCR 103L3 E6327 Datasheet - Page 4

• Manufacturer Part Number: BCR 103L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSLP3-4
• Manufacturer: Infineon Technologies

Specifications of BCR 103L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 20mA
• Frequency - Transition: 140MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR103L3E6327XT; SP000014756

Total power dissipation P
BCR103F
Total power dissipation P
BCR103T
mW
mW
300
200
150
100
300
200
150
100
50
50
0
0
0
0
20
20
40
40
60
60
80
80
tot
tot
100
100
= (T
= (T
120 °C
120 °C
S
S
)
)
T
T
S
S
150
150
4
Total power dissipation P
BCR103L3
mW
300
200
150
100
50
0
0
20
40
60
80
tot
100
= (T
BCR103...
2005-06-21
120 °C
S
)
T
S
150