BCR 103L3 E6327 Infineon Technologies, BCR 103L3 E6327 Datasheet - Page 5

• Manufacturer Part Number: BCR 103L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSLP3-4
• Manufacturer: Infineon Technologies

Specifications of BCR 103L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 20mA
• Frequency - Transition: 140MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR103L3E6327XT; SP000014756

Permissible Puls Load R
BCR103F
Permissible Puls Load R
BCR103L3
K/W
10
10
10
10
10
10
10
10
-1
-1
2
1
0
2
1
0
10
10
-6
-7
10
10
-6
-5
10
10
-5
-4
10
-4
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
-3
10
thJS
thJS
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
=
=
10
-2
-2
(t
(t
p
p
s
)
)
t
t p
s
p
10
10
0
0
5
Permissible Pulse Load
P
BCR103F
Permissible Pulse Load
P
BCR103L3
totmax
totmax
10
10
10
10
10
10
10
10
3
2
1
0
3
2
1
0
10
10
/P
/P
-6
-7
totDC
totDC
10
10
-6
-5
=
=
10
10
-5
(t
(t
p
p
-4
)
)
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
10
-3
10
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
BCR103...
-2
2005-06-21
-2
s
t
t
s
p
p
10
10
0
0