BCR 116L3 E6327 Infineon Technologies, BCR 116L3 E6327 Datasheet - Page 13

• Manufacturer Part Number: BCR 116L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 116L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR116L3E6327XT; SP000014853

Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.65
1
Package SOT323
0.3
2
±0.2
Pin 1
+0.1
-0.05
0.65
3
2.15
4
0.65
2
3x
0.1
0.6
M
13
0.65
0.1 MAX.
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
0.2
0.2
0.1
1.1
M
A
0.9
0.15
±0.1
+0.1
-0.05
A
BCR116...
2006-05-04