BCR 116L3 E6327 Infineon Technologies, BCR 116L3 E6327 Datasheet - Page 6

• Manufacturer Part Number: BCR 116L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 116L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR116L3E6327XT; SP000014853

Total power dissipation P
BCR116T
Permissible Pulse Load R
BCR116
K/W
mW
10
10
10
10
10
300
250
225
200
175
150
125
100
75
50
25
-1
0
3
2
1
0
10
0
-6
15
10
30
-5
45
10
-4
60
75
10
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
90 105 120 °C
tot
thJS
10
= (T
-2
=
S
(t
s
)
T
t
p
p
S
)
150
10
0
6
Total power dissipation P
BCR116W
Permissible Pulse Load
P
BCR116
totmax
mW
300
250
225
200
175
150
125
100
10
10
10
10
75
50
25
-
0
3
2
1
0
10
0
/P
-6
totDC
15
10
30
-5
=
45
10
(t
p
-4
60
)
10
75
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
90 105 120 °C
tot
10
= (T
BCR116...
-2
2006-05-04
S
s
)
T
t
p
S
150
10
0