BCR 116L3 E6327 Infineon Technologies, BCR 116L3 E6327 Datasheet - Page 16

• Manufacturer Part Number: BCR 116L3 E6327
• Description: TRANSISTOR NPN DGTL AF TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BCR 116L3 E6327

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR116L3E6327XT; SP000014853

Package Outline
Foot Print
For board assembly information please refer to Infineon website "Packages"
Marking Layout
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
1
2
3
Pin 1
marking
1) Dimension applies to plated terminal
Top view
0.225
0.15
Pin 1
marking
Copper
0.6
0.05 MAX.
0.225
Package TSLP-3-4
Solder mask
0.4
4
+0.1
0.76
0.5
2 x 0.15
16
0.35
±0.035
R0.19
0.2
0.17
±0.05
±0.035
Bottom view
Stencil apertures
1)
0.2
3
2
0.6
0.5
0.5
1)
±0.05
BCR133L3
Type code
Pin 1 marking
Laser marking
1
R0.1
BCR116...
2006-05-04