UMF32NTR Rohm Semiconductor, UMF32NTR Datasheet - Page 2

• Manufacturer Part Number: UMF32NTR
• Description: TRANS PNP DUAL 50V UMT6
• Manufacturer: Rohm Semiconductor

Specifications of UMF32NTR

• Transistor Type: PNP Pre-Biased, N-Channel
• Applications: General Purpose
• Voltage - Rated: 50V PNP, 30V N Channel
• Current Rating: 100mA PNP, 100mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: PNP + N MOSFET
• Collector Emitter Voltage V(br)ceo: -50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Tr1
Tr2
Tr1
Tr2
∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
∗1 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
∗ Transition frequency of the device
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
Forward transfer admittance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Turn-off delay time
Fall time
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Total power dissipation
Channel temperature
Range of storage temperature
Input capacitance
Rise time
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
on-state resistance
Parameter
Parameter
Parameter
Parameter
Continuous
Continuous
Pulsed
Pulsed
Symbol
Symbol
V
V
V
V
V
Tstg
Tstg
I
Tch
I
I
P
DRP
P
Symbol
Tj
CBO
CEO
EBO
I
DSS
GSS
I
DR
DP
V
BV
BV
BV
C
D
C
D
I
I
CE(sat)
h
CBO
EBO
Symbol
V
R
f
R
V
FE
CBO
CEO
EBO
T
(BR)DSS
1
t
t
I
|Y
C
I
C
C
DS(on)
GS(th)
d(on)
d(off)
GSS
DSS
t
t
oss
iss
rss
r
f
fs
150(TOTAL)
150(TOTAL)
|
−55 to +150
−55 to +150
3.29
Min.
−50
−50
100
Limits
Limits
−5
−100
−
−
−
−
−50
−50
150
±20
100
200
100
200
150
−5
30
Min.
0.8
30
20
−
−
−
−
−
−
−
−
−
−
−
Typ.
250
250
4.7
−
−
−
−
−
−
Typ.
13
15
35
80
80
Max.
Unit
mW
Unit
mW
6.11
−0.5
−0.5
−0.3
mA
mA
mA
mA
mA
600
−
−
−
−
5
7
−
9
4
°C
°C
°C
°C
V
V
V
V
V
−
−
−
−
∗1
∗1
∗1
∗2
Max.
MHz
Unit
1.0
1.5
±1
13
µA
µA
kΩ
−
8
−
−
−
−
−
−
−
−
V
V
V
V
−
I
I
I
V
V
I
I
V
C
C
E
C
C
Unit
ms
µA
µA
pF
pF
pF
= −50µA
CB
EB
CE
ns
ns
ns
ns
= −50µA
= −1mA
/I
= −1mA, V
V
Ω
Ω
V
B
= −4V
= −10V, I
= −50V
= −5mA/ −0.25mA
V
I
V
V
I
I
V
V
I
V
R
D
D
D
D
GS
DS
DS
DS
DS
GS
=10µA, V
=10mA, V
=1mA, V
=10mA, V
GS
Conditions
CE
=±20V, V
=30V, V
=3V, I
=3V, I
=5V, V
=5V, R
=10Ω
E
=5mA, f=100MHz
= −5V
−
D
D
GS
GS
=100µA
=10mA
L
GS
Conditions
=500Ω,
GS
GS
DD
EMF32 / UMF32N
=2.5V
=0V, f=1MHz
DS
=0V
=0V
=4V
=0V
5V,
∗
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