UMF32NTR Rohm Semiconductor, UMF32NTR Datasheet - Page 3

• Manufacturer Part Number: UMF32NTR
• Description: TRANS PNP DUAL 50V UMT6
• Manufacturer: Rohm Semiconductor

Specifications of UMF32NTR

• Transistor Type: PNP Pre-Biased, N-Channel
• Applications: General Purpose
• Voltage - Rated: 50V PNP, 30V N Channel
• Current Rating: 100mA PNP, 100mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: PNP + N MOSFET
• Collector Emitter Voltage V(br)ceo: -50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Tr1
Tr2
Electrical characteristic curves
500
200
100
0.15
0.05
Fig.6
50
20
10
0.1
1k
−100µ
5
2
1
Fig.3 Typical output characteristics
0
0.5
0
50
20
10
Fig.1 DC current gain vs. collector
0.001
5
2
1
−200µ
DRAIN-SOURCE VOLTAGE : V
0.002
COLLECTOR CURRENT : I
Static drain-source on-state
resistance vs. drain current ( Ι )
−500µ
1
current
Ta=125°C
Ta=100°C
4V
3.5V
DRAIN CURRENT : I
0.005 0.01 0.02
−25°C
−1m
−40°C
75°C
25°C
25°C
2
V
−2m
GS
2.5V
2V
=1.5V
3V
−5m
3
−10m
0.05 0.1
D
−20m
C
(A)
V
Ta=25°C
Pulsed
4
(A)
DS
CE
V
Pulsed
=−5V
−50m −100m
GS
0.2
(V)
=4V
5
0.5
Fig.7
−100m
Fig.4 Typical transfer characteristics
−500m
−200m
200m
100m
−50m
−20m
−10m
0.5m
0.2m
0.1m
50m
20m
10m
−5m
−2m
−1m
−100µ
5m
2m
1m
−1
0.5
50
Fig.2 Collector-emitter saturation
20
10
0.001
0
5
2
1
V
Pulsed
−200µ
DS
GATE-SOURCE VOLTAGE : V
0.002
Static drain-source on-state
resistance vs. drain current ( ΙΙ )
COLLECTOR CURRENT : I
=3V
voltage vs. collector current
Ta=125°C
−500µ
DRAIN CURRENT : I
0.005 0.01 0.02
1
−25°C
Ta=100°C
75°C
25°C
−1m
−40°C
25°C
−2m
2
Ta=125°C
−5m
−25°C
0.05 0.1
−10m
75°C
25°C
D
−20m
3
C
(A)
l
V
Pulsed
C
(A)
GS
/l
GS
B
0.2
−50m−100m
=20
(V)
=2.5V
4
0.5
1.5
0.5
2
0
Fig.8
1
−50
15
10
0
5
Fig.5 Gate threshold voltage vs.
EMF32 / UMF32N
0
CHANNEL TEMPERATURE : Tch (°C)
−25
GATE-SOURCE VOLTAGE : V
Static drain-source on-state
resistance vs. gate-source
voltage
channel temperature
0
5
25
50
10
I
I
D
D
75
=0.1A
=0.05A
100 125 150
15
V
I
Pulsed
D
DS
Ta=25°C
Pulsed
GS
=0.1mA
=3V
(V)
3/4
20