PIC16F1823-I/SL Microchip Technology, PIC16F1823-I/SL Datasheet - Page 114
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PIC16F1823-I/SL
Manufacturer Part Number
PIC16F1823-I/SL
Description
3.5 KB Flash, 128 Bytes RAM, 32 MHz Int. Osc, 12 I/0, Enhanced Mid Range Core 14
Manufacturer
Microchip Technology
Series
PIC® XLP™ 16Fr
Datasheets
1.PIC16F722-ISS.pdf
(8 pages)
2.PIC12F1822T-ISN.pdf
(404 pages)
3.PIC12F1822T-ISN.pdf
(10 pages)
Specifications of PIC16F1823-I/SL
Core Processor
PIC
Core Size
8-Bit
Speed
32MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
3.5KB (2K x 14)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Core
PIC
Processor Series
PIC16F
Data Bus Width
8 bit
Maximum Clock Frequency
32 MHz
Data Ram Size
128 B
On-chip Adc
Yes
Number Of Programmable I/os
12
Number Of Timers
3
Operating Supply Voltage
2.3 V to 5.5 V
Operating Temperature Range
- 40 C to + 85 C
A/d Bit Size
10 bit
A/d Channels Available
8
Height
1.25 mm
Interface Type
I2C, SPI, USART
Length
8.65 mm
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.3 V
Width
3.9 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC16F1823-I/SL
Manufacturer:
MICROCHIP
Quantity:
30 000
Part Number:
PIC16F1823-I/SL
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
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PIC12F/LF1822/PIC16F/LF1823
11.4
When modifying existing data in a program memory
row, and data within that row must be preserved, it must
first be read and saved in a RAM image. Program
memory is modified using the following steps:
1.
2.
3.
4.
5.
6.
7.
8.
TABLE 11-2:
EXAMPLE 11-3:
DS41413B-page 114
* This code block will read 1 word of program memory at the memory address:
*
*
Load the starting address of the row to be mod-
ified.
Read the existing data from the row into a RAM
image.
Modify the RAM image to contain the new data
to be written into program memory.
Load the starting address of the row to be rewrit-
ten.
Erase the program memory row.
Load the write latches with data from the RAM
image.
Initiate a programming operation.
Repeat steps 6 and 7 as many times as required
to reprogram the erased row.
PROG_ADDR_LO (must be 00h-08h) data will be returned in the variables;
PROG_DATA_HI, PROG_DATA_LO
BANKSEL
MOVLW
MOVWF
CLRF
BSF
BCF
BSF
NOP
NOP
BSF
MOVF
MOVWF
MOVF
MOVWF
Modifying Flash Program Memory
8000h-8003h
8007h-8008h
Address
8006h
EEADRL
PROG_ADDR_LO
EEADRL
EEADRH
EECON1,CFGS
INTCON,GIE
EECON1,RD
INTCON,GIE
EEDATL,W
PROG_DATA_LO
EEDATH,W
PROG_DATA_HI
USER ID, DEVICE ID AND CONFIGURATION WORD ACCESS (CFGS = 1)
CONFIGURATION WORD AND DEVICE ID ACCESS
Configuration Words 1 and 2
Device ID/Revision ID
; Select correct Bank
;
; Store LSB of address
; Clear MSB of address
; Select Configuration Space
; Disable interrupts
; Initiate read
; Executed (See
; Ignored (See
; Restore interrupts
; Get LSB of word
; Store in user location
; Get MSB of word
; Store in user location
Function
User IDs
Preliminary
Figure
Figure
11-1)
register pair is cleared.
11.5
Instead of accessing program memory or EEPROM
data memory, the User ID’s, Device ID/Revision ID and
Configuration Words can be accessed when CFGS = 1
in the EECON1 register. This is the region that would
be pointed to by PC<15> = 1, but not all addresses are
accessible. Different access may exist for reads and
writes. Refer to
When read access is initiated on an address outside the
parameters listed in
11-1)
Read Access
User ID, Device ID and
Configuration Word Access
Yes
Yes
Yes
Table
Table
11-2.
2010 Microchip Technology Inc.
11-2, the EEDATH:EEDATL
Write Access
Yes
No
No
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