PIC16F1823-I/SL Microchip Technology, PIC16F1823-I/SL Datasheet - Page 114

• Manufacturer Part Number: PIC16F1823-I/SL
• Description: 3.5 KB Flash, 128 Bytes RAM, 32 MHz Int. Osc, 12 I/0, Enhanced Mid Range Core 14
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 16Fr

Specifications of PIC16F1823-I/SL

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 32MHz
• Connectivity: I²C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 12
• Program Memory Size: 3.5KB (2K x 14)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 14-SOIC (3.9mm Width), 14-SOL
• Core: PIC
• Processor Series: PIC16F
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 32 MHz
• Data Ram Size: 128 B
• On-chip Adc: Yes
• Number Of Programmable I/os: 12
• Number Of Timers: 3
• Operating Supply Voltage: 2.3 V to 5.5 V
• Operating Temperature Range: - 40 C to + 85 C
• A/d Bit Size: 10 bit
• A/d Channels Available: 8
• Height: 1.25 mm
• Interface Type: I2C, SPI, USART
• Length: 8.65 mm
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.3 V
• Width: 3.9 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PIC12F/LF1822/PIC16F/LF1823
11.4
When modifying existing data in a program memory
row, and data within that row must be preserved, it must
first be read and saved in a RAM image. Program
memory is modified using the following steps:
1.
2.
3.
4.
5.
6.
7.
8.
TABLE 11-2:
EXAMPLE 11-3:
DS41413B-page 114
* This code block will read 1 word of program memory at the memory address:
*
*
Load the starting address of the row to be mod-
ified.
Read the existing data from the row into a RAM
image.
Modify the RAM image to contain the new data
to be written into program memory.
Load the starting address of the row to be rewrit-
ten.
Erase the program memory row.
Load the write latches with data from the RAM
image.
Initiate a programming operation.
Repeat steps 6 and 7 as many times as required
to reprogram the erased row.
PROG_ADDR_LO (must be 00h-08h) data will be returned in the variables;
PROG_DATA_HI, PROG_DATA_LO
BANKSEL
MOVLW
MOVWF
CLRF
BSF
BCF
BSF
NOP
NOP
BSF
MOVF
MOVWF
MOVF
MOVWF
Modifying Flash Program Memory
8000h-8003h
8007h-8008h
Address
8006h
EEADRL
PROG_ADDR_LO
EEADRL
EEADRH
EECON1,CFGS
INTCON,GIE
EECON1,RD
INTCON,GIE
EEDATL,W
PROG_DATA_LO
EEDATH,W
PROG_DATA_HI
USER ID, DEVICE ID AND CONFIGURATION WORD ACCESS (CFGS = 1)
CONFIGURATION WORD AND DEVICE ID ACCESS
Configuration Words 1 and 2
Device ID/Revision ID
; Select correct Bank
;
; Store LSB of address
; Clear MSB of address
; Select Configuration Space
; Disable interrupts
; Initiate read
; Executed (See
; Ignored (See
; Restore interrupts
; Get LSB of word
; Store in user location
; Get MSB of word
; Store in user location
Function
User IDs
Preliminary
Figure
Figure
11-1)
register pair is cleared.
11.5
Instead of accessing program memory or EEPROM
data memory, the User ID’s, Device ID/Revision ID and
Configuration Words can be accessed when CFGS = 1
in the EECON1 register. This is the region that would
be pointed to by PC<15> = 1, but not all addresses are
accessible. Different access may exist for reads and
writes. Refer to
When read access is initiated on an address outside the
parameters listed in
11-1)
Read Access
User ID, Device ID and
Configuration Word Access
Yes
Yes
Yes
Table
Table
11-2.
 2010 Microchip Technology Inc.
11-2, the EEDATH:EEDATL
Write Access
Yes
No
No