TZA3033T/C3,112 NXP Semiconductors, TZA3033T/C3,112 Datasheet - Page 19

• Manufacturer Part Number: TZA3033T/C3,112
• Manufacturer: NXP Semiconductors

Specifications of TZA3033T/C3,112

• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
Physical characteristics of the bare die
Note
1. For the TZA3033U/G version only.
2002 Sep 06
handbook, full pagewidth
Gold layer
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
SDH/SONET STM1/OC3
transimpedance amplifier
PARAMETER
(1)
Fig.22 Bonding pad plus gold plate locations of the TZA3033U/G.
2.8 m Au + 3.2 m TiW
2.1 m PhosphoSilicate Glass (PSG) on top of 0.65 m oxynitride
minimum dimension of exposed metallization is 90
1.22 m W/AlCu/TiW
380 m nominal
1.03
silicon; electrically connected to GND potential through substrate contacts
<440 C; recommended die attach is glue
<15 s
1300
1.30 mm (1.34 mm
m
IPhoto
DREF
GND
GND
x
0
y
0
1
2
3
4
5
6
7
15
TZA3033U/G
2
)
455 m
8
19
1030 m
14
9
13
10
VALUE
12
11
OUTQ
OUT
MCE068
90 m (pad size = 100
725
m
Product specification
TZA3033
100 m)