TZA3033T/C3,112 NXP Semiconductors, TZA3033T/C3,112 Datasheet - Page 8
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TZA3033T/C3,112
Manufacturer Part Number
TZA3033T/C3,112
Description
Manufacturer
NXP Semiconductors
Datasheet
1.TZA3033TC3112.pdf
(28 pages)
Specifications of TZA3033T/C3,112
Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Compliant
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
HANDLING
Precautions should be taken to avoid damage through electrostatic discharge. This is particularly important during
assembly and handling of the bare die. Additional safety can be obtained by bonding the V
remaining pads may then be bonded to their external connections in any order.
THERMAL CHARACTERISTICS
2002 Sep 06
V
V
I
P
T
T
T
R
n
SYMBOL
SYMBOL
stg
j
amb
CC
n
tot
th(j-s)
SDH/SONET STM1/OC3
transimpedance amplifier
supply voltage
DC voltage
DC current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to solder point
pin 3/pad 5: IPhoto
pins 6 and 7/pads 11 and 12: OUT and OUTQ
pad 15: AGC (TZA3033U only)
pin 1/pad 1: DREF
pin 3/pad 5: IPhoto
pins 6 and 7/pads 11 and 12: OUT and OUTQ
pad 15: AGC (TZA3033U only)
pin 1/pad 1: DREF
PARAMETER
PARAMETER
8
0.5
0.5
0.5
0.5
0.5
1
15
0.2
2.5
65
40
MIN.
VALUE
160
CC
and GND pads first, the
+5.5
+2
V
V
V
+2.5
+15
+0.2
+2.5
300
+150
150
+85
CC
CC
CC
Product specification
MAX.
+ 0.5 V
+ 0.5 V
+ 0.5 V
TZA3033
UNIT
V
V
mA
mA
mA
mA
mW
K/W
C
C
C
UNIT