TZA3044TT/C2 NXP Semiconductors, TZA3044TT/C2 Datasheet - Page 21
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TZA3044TT/C2
Manufacturer Part Number
TZA3044TT/C2
Description
Manufacturer
NXP Semiconductors
Datasheet
1.TZA3044TTC2.pdf
(28 pages)
Specifications of TZA3044TT/C2
Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
16
Package Type
TSSOP
Lead Free Status / RoHS Status
Not Compliant
Philips Semiconductors
Physical characteristics of bare die
2002 Jul 19
handbook, full pagewidth
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attache temperature
Attache time
SDH/SONET STM4/OC12 and 1.25
Gbits/s Gigabit Ethernet postamplifiers
(1) Typical value.
PARAMETER
1.55
mm
Fig.27 Bonding pad locations of TZA3044U and TZA3044BU.
2.1 m PSG (PhosphoSilicate Glass) on top of 0.65 m oxynitride
minimum dimension of exposed metallization is 90
1.22 m W/AlCu/TiW
380 m nominal
1.55
silicon; electrically connected to GND potential through substrate contacts
<440 C; recommended die attache is glue
<15 s
(1)
AGND
AGND
AGND
V CCA
DINQ
TEST
DIN
n.c.
1.55 mm (2.4 mm
10
11
4
5
6
7
8
9
12
3
13
2
2
14
1
)
x
TZA3044BU
TZA3044U
1.55
21
15
32
0
y
0
(1)
16
31
mm
17
30
VALUE
18
29
28
19
MGR242
27
26
25
24
23
22
21
20
90 m (pad size = 100
TZA3044; TZA3044B
V CCD
TEST
DGND
DOUT
DOUTQ
DGND
TEST
DGND
Product specification
100 m)