MT46V64M4P-75:G TR Micron Technology Inc, MT46V64M4P-75:G TR Datasheet - Page 69
MT46V64M4P-75:G TR
Manufacturer Part Number
MT46V64M4P-75:G TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V64M4P-75G_TR.pdf
(93 pages)
Specifications of MT46V64M4P-75:G TR
Organization
64Mx4
Density
256Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
150mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Figure 32:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
Command
Command
Address
Address
Address
READ-to-WRITE
DQS
DQS
DQS
CK#
CK#
CK#
DM
DM
DM
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank a,
READ
Bank,
READ
Bank,
READ
Col n
Col n
Col n
T0
T0
T0
1. Page remains open.
2. DO n = data-out from column n; DI b = data-in from column b.
3. BL = 4 (applies for bursts of 8 as well; if BL = 2, the BURST command shown can be NOP).
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal
CL = 2
BST
BST
BST
T1
T1
T1
CL = 2.5
1
1
1
CL = 3
t
AC,
NOP
NOP
NOP
T2
T2
T2
t
DQSCK, and
DO
n
67
T2n
T2n
DO
n
WRITE
NOP
Bank,
Col b
T3
T3
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(NOM)
t
DQSS
DQSQ.
DO
n
T3n
T3n
256Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
WRITE
Bank,
WRITE
Col b
T4
T4
T4
NOP
DI
b
t
(NOM)
DQSS
t
(NOM)
DQSS
T4n
©2003 Micron Technology, Inc. All rights reserved.
T5
T5
T5
DI
NOP
NOP
DI
NOP
b
b
Don’t Care
T5n
T5n
T5n
Operations
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